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TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TOSHIBA InGaAP LED
TLRE50T,TLRME50T,TLSE50T,TLOE50T,TLYE50T, TLPYE50T,TLGE50T,TLFGE50T,TLPGE50T
Panel Circuit Indicators
Unit: mm
* * * * * * * *
3 mm package InGaAP technology All plastic mold type Transparent lens Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure green) High intensity light emission Excellent low current light output Applications: message boards, security devices and dashboard displays
Line-up
Product Name TLRE50T TLRME50T TLSE50T TLOE50T TLYE50T TLPYE50T TLGE50T TLFGE50T TLPGE50T Color Red Red Red Orange Yellow Pure Yellow Green Green Pure Green
InGaAlP
Material
JEDEC JEITA TOSHIBA Weight: 0.14 g
4-3E1A
1
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
Maximum Ratings (Ta = 25C)
Product Name TLRE50T TLRME50T TLSE50T TLOE50T TLYE50T TLPYE50T TLGE50T TLFGE50T TLPGE50T Forward Current IF (mA) 50 50 50 50 50 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 4 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 120 120 120 120 120 -40~100 -40~120 Operating Temperature Topr (C) Storage Temperature Tstg (C)
Electrical and Optical Characteristics (Ta = 25C)
Product Name TLRE50T TLRME50T TLSE50T TLOE50T TLYE50T TLPYE50T TLGE50T TLFGE50T TLPGE50T Unit Typ. Emission Wavelength ld 630 626 613 605 587 580 571 565 558 lP (644) (636) (623) (612) (590) (583) (574) (568) (562) nm Dl 20 23 20 20 17 14 17 15 14 IF 20 20 20 20 20 20 20 20 20 mA Luminous Intensity IV Min Typ. IF 850 850 1530 1530 1530 850 476 272 153 mcd 1800 2200 3500 4500 3500 2500 1500 1000 600 20 20 20 20 20 20 20 20 20 mA Forward Voltage VF Typ. Max IF 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.1 V 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 20 20 20 20 20 20 20 20 20 mA Reverse Current IR Max VR 50 50 50 50 50 50 50 50 50 mA 4 4 4 4 4 4 4 4 4 V
Precautions
* * * Please be careful of the following: Soldering temperature: 260C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLRE50T
IF - VF
100 Ta = 25C 50 30 10000 Ta = 25C
IV - IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV - Tc
3 1.0
Relative luminous intensity - Wavelength
IF = 20 mA
Relative luminous intensity IV
Ta = 25C
Relative luminous intensity
-20 0 60 80
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
20
40
0 580
600
620
640
660
680
700
Case temperature Tc
(C)
Wavelength l
(nm)
Radiation pattern
80
IF - Ta (mA) Allowable forward current IF
60 40 60 70 80 90 1.0 20 0 0
Ta = 25C
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (C)
3
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLRME50T
IF - VF
100 Ta = 25C 50 30 10000 Ta = 25C
IV - IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV - Tc
10 1.0
Relative luminous intensity - Wavelength
IF = 20 mA
Relative luminous intensity IV
5
Ta = 25C
Relative luminous intensity
-20 0 20 40 60 80
0.8
3
0.6
1 0.5 0.3
0.4
0.2
0.1
0 580
600
620
640
660
680
700
Case temperature Tc
(C)
Wavelength l
(nm)
Radiation pattern
80
IF - Ta (mA) Allowable forward current IF
60 40 60 70 80 90 1.0 20 0 0
Ta = 25C
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (C)
4
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLSE50T
IF - VF
100 Ta = 25C 50 30 10000 Ta = 25C
IV - IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV - Tc
3 1.0
Relative luminous intensity - Wavelength
IF = 20 mA
Relative luminous intensity IV
Ta = 25C
Relative luminous intensity
-20 0 60 80
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
20
40
0 560
580
600
620
640
660
680
Case temperature Tc
(C)
Wavelength l
(nm)
Radiation pattern
80
IF - Ta (mA) Allowable forward current IF
60 40 60 70 80 90 1.0 20 0 0
Ta = 25C
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (C)
5
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLOE50T
IF - VF
100 Ta = 25C 50 30 30000 Ta = 25C 10000
IV - IF
IF (mA)
10
Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3
Forward current
(mcd)
1000
5 3
1 1.6
100 1
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV - Tc
3 1.0
Relative luminous intensity - Wavelength
IF = 20 mA
Relative luminous intensity IV
Ta = 25C
Relative luminous intensity
-20 0 60 80
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
20
40
0 540
560
580
600
620
640
660
Case temperature Tc
(C)
Wavelength l
(nm)
Radiation pattern
80
IF - Ta (mA) Allowable forward current IF
60 40 60 70 80 90 1.0 20 0 0
Ta = 25C
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (C)
6
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLYE50T
IF - VF
100 Ta = 25C 50 30 10000 Ta = 25C
IV - IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV - Tc
3 1.0
Relative luminous intensity - Wavelength
IF = 20 mA
Relative luminous intensity IV
Ta = 25C
Relative luminous intensity
-20 0 60 80
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
20
40
0 540
560
580
600
620
640
660
Case temperature Tc
(C)
Wavelength l
(nm)
Radiation pattern
80
IF - Ta (mA) Allowable forward current IF
60 40 60 70 80 90 1.0 20 0 0
Ta = 25C
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (C)
7
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLPYE50T
IF - VF
100 Ta = 25C 50 30 10000 Ta = 25C
IV - IF
IF (mA)
Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3
(mcd)
1000 100 20 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV - Tc
10 1.0
Relative luminous intensity - Wavelength
IF = 20 mA
Relative luminous intensity IV
Relative luminous intensity
5 3
Ta = 25C 0.8
0.6
1
0.5 0.3
0.4
0.2
0.1
-20
0
20
40
60
80
0 540
560
580
600
620
640
660
Case temperature Tc
(C)
Wavelength l
(nm)
Radiation pattern
80
IF - Ta (mA) Allowable forward current IF
60 40 60 70 80 90 1.0 20 0 0
Ta = 25C
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (C)
8
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLGE50T
IF - VF
100 Ta = 25C 50 30 5000 Ta = 25C
IV - IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3
1000
Forward current
10
5 3
100
1 1.6
10 1
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV - Tc
10 1.0
Relative luminous intensity - Wavelength
IF = 20 mA
Relative luminous intensity IV
5
Ta = 25C
Relative luminous intensity
-20 0 60 80
0.8
3
0.6
1 0.5 0.3
0.4
0.2
0.1
20
40
0 520
540
560
580
600
620
640
Case temperature Tc
(C)
Wavelength l
(nm)
Radiation pattern
80
IF - Ta (mA) Allowable forward current IF
60 40 60 70 80 90 1.0 20 0 0
Ta = 25C
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (C)
9
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLFGE50T
IF - VF
100 Ta = 25C 50 30 5000 Ta = 25C
IV - IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3
1000
Forward current
10
5 3
100
1 1.6
10 1
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV - Tc
10 1.0
Relative luminous intensity - Wavelength
IF = 20 mA
Relative luminous intensity IV
Relative luminous intensity
5 3
Ta = 25C 0.8
0.6
1
0.4
0.5 0.3
0.2
0.1
-20
0
20
40
60
80
0 520
540
560
580
600
620
640
Case temperature Tc
(C)
Wavelength l
(nm)
Radiation pattern
80
IF - Ta (mA) Allowable forward current IF
60 40 60 70 80 90 1.0 20 0 0
Ta = 25C
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (C)
10
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLPGE50T
IF - VF
100 Ta = 25C 50 30 10000 Ta = 25C
IV - IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV - Tc
10 1.0
Relative luminous intensity - Wavelength
IF = 20 mA
Relative luminous intensity IV
5
Ta = 25C
Relative luminous intensity
-20 0 20 40 60 80
0.8
3
0.6
1 0.5 0.3
0.4
0.2
0.1
0 520
540
560
580
600
620
640
Case temperature Tc
(C)
Wavelength l
(nm)
Radiation pattern
80
IF - Ta (mA) Allowable forward current IF
60 40 60 70 80 90 1.0 20 0 0
Ta = 25C
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (C)
11
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
RESTRICTIONS ON PRODUCT USE
000707EAC
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
12
2002-01-17

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